陈景升

    

陈景升  高级研究员


1994年,学士,兰州大学,物理学

1999年,博士,兰州大学,物理学


电邮:msecj@nus.edu.sg

个人主页:http://www.mse.nus.edu.sg/staff/cjs.php

研究领域

1.信息存储:用于高密度磁记录介质的磁性材料(通过磁场进行磁性切换),基于垂直各向异性的自旋扭矩切换(通过电流的磁性切换)用于MRAM;

2.异质结构铁电/铁磁多铁性(电场磁转换);

3.铁电隧道结和电阻存储器(RRAM);

4.纳米结构磁性材料;

5.强电子相关的氧化物材料。

代表性论文
  1. J. Y. Deng, J. S. Chen, et.al. “Lattice-mismatch-induced oscillatory feature size and its impact on the physical limitation of grain size”, Physical Review Applied 9, 034023  (2018).

  2. Y. Y. Li, J. S. Chen, et.al. Orthorhombic Ti2O3: A Polymorph-Dependent Narrow-Bandgap Ferromagnetic Oxide” Advanced Functional Materials, 28 (7), 1705657  (2018).

  3.  Q. Y. Wu, J. S. Chen, et.al. “Achieving giant tunneling electroresistance and magnetoresistance by BaTiO3/SrTiO3 barrier and Heusler alloy electrode” Physical Review Materials, 1(7) 074409 (2017).

  4. R. Guo, J. S. Chen, et.al. “Effect of Extrinsically Introduced Passive Interface Layer on the Performance of Ferroelectric Tunnel Junctions” ACS Appl. Mater. Interfaces, 9 (6), 5050–5055 (2017)

  5. W. M. Lv. J. S. Chen, “Multi non-volatile state resistive switching arising from ferroelectricity and oxygen vacancy migration” Advanced Materials, 29 (24) 1606165, 2017.

 


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